Method of metalizing a semiconductor power device ceramic member
OwnerBurhan Ozmat, Victor A. K. Temple +1inventors
InventorsBurhan Ozmat, Victor A. K. Temple, James R. Murray SR.
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OwnerBurhan Ozmat, Victor A. K. Temple +1inventors
InventorsBurhan Ozmat, Victor A. K. Temple, James R. Murray SR.
Estimating the term…
A method of metalizing a ceramic member (e.g., lid or thermal base) for a semiconductor power device with a film of aluminum in an ion vapor deposition chamber in which an argon ion cloud is formed around the member within the chamber by biasing the member with a voltage and in which a continuous source of aluminum vapor is provided within the chamber so that aluminum ions are available to be accelerated towards the member from plural directions by the bias voltage, the aluminum ions being formed from the aluminum vapor upon passage through the argon ion cloud. The member may be an array of plates that are metalized before being separated. The metalized plates may be used as lids for semiconductor device packages or as thermal bases for power modules.
A method of depositing a metal on a ceramic component of a package for an integrated circuit comprising the steps of:
A member useful as on of a lid for integrated circuit packages and a thermal base for integrated circuit modules comprising:
A method of depositing an aluminum film on a ceramic component of an integrated circuit package with plural surfaces in a vapor deposition chamber comprising the steps of:
A method of adhering a metal film to a ceramic component for an integrated circuit package comprising the steps of:
Dependencies are inferred from the claim text.