Method for planarizing a semiconductor device using ceria-based slurry
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-yup Kim, Young-rae Park, Sang-rok Hah
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Abstract
A chemical mechanical polishing (CMP) process employs a ceria-based slurry as an abrasive. In particular, a nitride pattern is formed over a semiconductor substrate, and an oxide layer is then formed over the semiconductor substrate and the nitride pattern. Next, a sacrificial insulation layer which is devoid of surface steps is formed over the oxide layer. The sacrificial insulation layer and the oxide layer are then polished by CMP using the ceria-based slurry and using the nitride pattern as a stopper.
Claims16
A planarization method for a semiconductor device, comprising:
- forming a nitride pattern over a semiconductor substrate;
- forming an oxide layer over the nitride pattern and the semiconductor substrate;
- forming a sacrificial insulation layer over the oxide layer, wherein the sacrificial insulation layer is formed such that an upper surface thereof which is opposite the oxide layer is devoid of local steps;
- and
- chemical mechanical polishing the sacrificial insulation layer and the oxide layer using a ceria-based slurry and using the nitride pattern as a stopper.
A planarization method for a semiconductor device, comprising:
- forming an oxide layer within a plurality of trenches formed in an active region the semiconductor substrate and over a nitride pattern located between the plurality of trenches, wherein an upper surface of the oxide layer which is opposite the substrate is formed so as to have a stepped configuration located over the active region;
- forming a sacrificial insulation layer over the oxide layer, wherein the sacrificial insulation layer is formed such that an upper surface thereof which is opposite the stepped configuration of the upper surface of the oxide layer is devoid of steps;
- and
- chemical mechanical polishing the sacrificial insulation layer and the oxide layer using a ceria-based slurry and using the nitride pattern as a stopper.
Dependencies are inferred from the claim text.