Method for fabricating semiconductor components
AssigneeInfineon Technologies AG
InventorsThomas Rohr, Christine Dehm, Carlos Mazure-Espejo
Life of this patent
Estimating the term…
Abstract
Disclosed is a method for producing semiconductor elements including a metal layer (10) configured on a semiconductor substrate (5). The inventive method consists of the following steps: a silicon layer (15) is deposited on a metal layer (10); an etch mask is applied in order to structure the silicon layer (1%); the silicon layer is selectively etched (15) using the etch mask (25); and the metal layer (10) is structured in an etching process using a selectively etched silicon layer (15) as a hard mask.
Claims11
A method for fabricating semiconductor components having an electrically conductive layer configured on a semiconductor substrate, which comprises:
- applying a silicon mask layer to a conductive layer;
- applying an etching mask to the conductive layer for patterning the silicon mask layer;
- selectively etching the silicon mask layer using the etching mask;
- and
- patterning the conductive layer in an etching process using the selectively etched mask layer as a hard mask.
A semiconductor component comprising:
- a semiconductor substrate;
- a conductive layer configured on said semiconductor substrate;
- a mask layer covering said conductive layer, said mask layer being a silicon layer;
- and
- a further layer configured above said conductive layer and connected to said conductive layer with said mask layer interposed therebetween, said further layer having a contact hole therethrough for making contact with said conductive layer, said contact hole extending at least to said mask layer;
- said conductive layer being a layer selected from the group consisting of platinum, iridium, palladium, ruthenium, an alloy of at least one of the abovementioned metals, iridium oxide, and ruthenium oxide.
Dependencies are inferred from the claim text.