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OwnerKevin Donoghue, Todd Stepp +2inventors
InventorsKevin Donoghue, Todd Stepp, Gerald M. Cox, Kristel Vanbaekel
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The present invention is a novel process for removing photoresist, post-etch polymers, and other assorted residues from semiconductor devices incorporating low-κ dielectric materials. In general the invention comprehends using a substantially oxygen free reducing plasma that is preferably high in hydrogen content, rather than the oxidizing plasma typically used. The invention generally comprises the steps of (a) introducing a semiconductor device including a dielectric material comprising an organic silicon glass into a chamber, (b) introducing effective amounts of a hydrogen containing gas such as ammonia or methane, and (c) decomposing the gases and plasma phase reacting the decomposed gases with the photoresist and or other residues to volatilize the residues. In one preferred embodiment of the method the etchant gasses include ammonia, helium, and a forming gas preferably comprising hydrogen and nitrogen. In a second preferred embodiment, the etchant gasses include ammonia and a forming gas comprising hydrogen and helium. In a third preferred embodiment, the forming gas is replaced with water vapor preferably created in a catalytic moisture generator by combining hydrogen in a helium carrier gas, with oxygen.
A method for removing photoresist and for removing organic and inorganic residues from the surface of a semiconductor device, the method comprising:
A method for removing photoresist and for removing organic and inorganic residues from the surface of a semiconductor device, the method comprising:
A method for removing photoresist and for removing organic and inorganic residues from the surface of a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.