High-Q inductive elements
AssigneeMicron Technology, Inc.
InventorsPaul A. Farrar, Leonard Forbes
Life of this patent
Estimating the term…
Abstract
A first insulator is formed on a base layer. A first conductor is formed on the first insulator. The first conductor is patterned. A second insulator is formed over the first insulator. A via hole is formed in the second insulator and is electrically coupled to the first conductor through the via hole. A second conductor is formed on the second insulator, and is electrically coupled to the first conductor by the via hole. The second conductor is patterned. A cavity is formed under the second conductor, and in the first and second insulators.
Claims68
A method of forming an air bridge on a substrate, comprising the steps of:
- forming a first insulator on a base layer;
- forming a first conductor on the first insulator;
- patterning the first conductor;
- forming a second insulator over the first insulator;
- forming a via hole in the second insulator;
- forming a second conductor, on the second insulator, coupled to the first conductor by the via hole;
- patterning the second conductor;
- and
- forming a cavity, under the second conductor, in the first and second insulators.
A method of forming an air bridge on an integrated circuit, comprising the steps of:
- forming a first insulator on a base layer of the integrated circuit;
- forming a first conductor on the first insulator;
- patterning the first conductor;
- forming a second insulator over the first insulator;
- forming a via hole in the second insulator;
- forming a second conductor, on the second insulator, coupled to the first conductor by the via hole;
- patterning the second conductor;
- and
- forming a cavity, under the second conductor, in the first and second insulators.
A method of forming an air bridge on a substrate, comprising the steps of:
- forming a first insulator on a base layer;
- forming a first conductor on the first insulator;
- patterning the first conductor;
- forming a second insulator over the first insulator;
- forming a via hole in the second insulator;
- forming a masking layer on the second insulator;
- developing the masking layer to produce a developed masking layer;
- forming a cavity, defined by the developed masking layer, in the first and second insulators;
- filling the cavity with a polymer;
- cleaning the polymer;
- forming a second conductor, on the polymer, coupled to the first conductor by the via hole;
- and
- patterning the second conductor.
A method of forming an air bridge on an integrated circuit, comprising the steps of:
- forming a first insulator on a base layer of the integrated circuit;
- forming a first conductor on the first insulator;
- patterning the first conductor;
- forming a second insulator over the first insulator;
- forming a via hole in the second insulator;
- forming a masking layer on the integrated circuit;
- developing the masking layer to produce a developed masking layer;
- forming a cavity, defined by the developed masking layer, in the first and second insulators;
- filling the cavity with a polymer;
- cleaning the integrated circuit;
- forming a second conductor, on the polymer, coupled to the first conductor by the via hole;
- and
- patterning the second conductor.
A method of forming an inductive element on a substrate, comprising the steps of:
- forming a first insulator on a base layer;
- forming a first conductor on the first insulator;
- patterning the first conductor;
- forming a second insulator over the first insulator;
- forming a via hole in the second insulator;
- forming a second conductor, on the second insulator, coupled to the first conductor by the via hole;
- patterning the second conductor;
- and
- forming a cavity, under substantially parallel branches of the inductive element, in the first and second insulators.
A method of forming an inductive element on a substrate, comprising the steps of:
- forming a first insulator on a base layer;
- forming a first conductor on the first insulator;
- patterning the first conductor;
- forming a second insulator over the first insulator;
- forming a via hole in the second insulator;
- forming a masking layer on the second insulator;
- developing the masking layer to produce a developed masking layer;
- forming a cavity, defined by the developed masking layer, in the first and second insulators;
- filling the cavity with a polymer;
- cleaning the polymer;
- forming a second conductor, on the polymer, coupled to the first conductor by the via hole;
- patterning the second conductor;
- and
- wherein the cavity is under substantially parallel branches of the inductive element.
A method of forming an inductive element on a substrate, comprising the steps of:
- forming a first insulator on a base layer;
- forming a first conductor on the first insulator;
- patterning the first conductor;
- forming a second insulator, over the first insulator, from a low dielectric inorganic insulator;
- oxidizing a portion of the second insulator;
- removing the oxidized portion of the second insulator;
- forming a via hole in the second insulator;
- forming a second conductor, on the second insulator, that is coupled to the first conductor by the via hole;
- and
- patterning the second conductor.
An inductive element on a substrate, comprising:
- a base layer;
- a first insulator formed on the base layer;
- a first conductor formed on the first insulator;
- a second insulator formed on the first insulator;
- a second conductor, having first and second branches that are substantially parallel, formed on the second insulator;
- a via hole, formed in the second insulator, coupling the first and second conductors;
- a cavity, under the second conductor, formed in the first and second insulators;
- and
- a support structure, in the cavity, propping up the second conductor above the base layer.
An inductive element on an integrated circuit, comprising:
- a base layer on the integrated circuit;
- a first insulator formed on the base layer;
- a first conductor formed on the first insulator;
- a second insulator formed on the first insulator;
- a second conductor, having first and second branches that are substantially parallel, formed on the second insulator;
- a via hole, formed in the second insulator, coupling the first and second conductors;
- a cavity, under the second conductor, formed in the first and second insulators;
- and
- a support structure, in the cavity, propping up the second conductor above the base layer.
An inductive element on a substrate, comprising:
- a base layer;
- a first conductor buried in the base layer;
- an insulator formed on the base layer;
- a second conductor, having first and second branches that are substantially parallel, formed on the second insulator;
- a plug, formed in the base layer, coupled to the first conductor;
- a via hole formed in the insulator coupling the plug to the second conductor;
- a cavity, under second conductor, formed in the insulator;
- and
- a support structure, in the cavity, propping up the conductor above the base layer.
An inductive element on a substrate, comprising the steps of:
- a first insulator on a base layer;
- a first conductor on the first insulator;
- a second insulator, formed over the first insulator, from a low dielectric inorganic insulator;
- a via hole in the second insulator;
- a second conductor, formed on the second insulator, that is coupled to the first conductor by the via;
- and
- wherein the first and second conductors form substantially parallel branches.
A communications device, comprising:
- a transmitter, including:
- a semiconductor device, and
- an inductive element, operatively coupled to the semiconductor device, including:
- a base layer,
- a first insulator formed on the base layer,
- a first conductor formed on the first insulator,
- a second insulator formed on the first insulator,
- a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,
- a via hole in the second insulator coupling the first and second conductors,
- a cavity, under the second conductor, in the first and second insulators, and
- a support structure, in the cavity, propping up the second conductor above the base layer.
A communications device, comprising:
- a transmitter, including:
- a semiconductor device, and
- an inductive element, operatively coupled to the semiconductor device, including:
- a base layer,
- a first conductor buried in the base layer,
- an insulator formed on the base layer,
- a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,
- a plug, in the base layer, coupled to the first conductor,
- a via hole in the insulator coupling the plug to the second conductor,
- a cavity, under the second conductor, in the insulator, and
- a support structure, in the cavity, propping up the second conductor above the base layer.
A communications device, comprising:
- a receiver, including:
- a semiconductor device, and
- an inductive element, operatively coupled to the semiconductor device, including:
- a base layer,
- a first insulator formed on the base layer,
- a first conductor formed on the first insulator,
- a second insulator formed on the first insulator,
- a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,
- a via hole in the second insulator coupling the first and second conductors,
- a cavity, under the second conductor, in the first and second insulators, and
- a support structure, in the cavity, propping up the second conductor above the base layer.
A communications device, comprising:
- a receiver, including:
- a semiconductor device, and
- an inductive element, operatively coupled to the semiconductor device, including:
- a base layer,
- a first conductor buried in the base layer,
- an insulator formed on the base layer,
- a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,
- a plug, in the base layer, coupled to the first conductor,
- a via hole in the insulator coupling the plug to the second conductor,
- a cavity, under the second conductor, in the insulator, and
- a support structure, in the cavity, propping up the second conductor above the base layer.
A communications device, comprising:
- a transmitter, including:
- a semiconductor device, and
- an inductive element, operatively coupled to the semiconductor device, including:
- a first insulator on a base layer;
- a first conductor on the first insulator;
- a second insulator, formed over the first insulator, from a low dielectric inorganic insulator;
- a via hole in the second insulator;
- and
- a second conductor, formed on the second insulator, that is coupled to the first conductor by the via;
- and
- wherein the first and second conductors form substantially parallel branches.
A communications device, comprising:
- a receiver, including
- a semiconductor device, and
- an inductive element, operatively coupled to the semiconductor device, including:
- a first insulator on a base layer;
- a first conductor on the first insulator;
- a second insulator, formed over the first insulator, from a low dielectric inorganic insulator;
- a via hole in the second insulator;
- and
- a second conductor, formed on the second insulator, that is coupled to the first conductor by the via;
- and
- wherein the first and second conductors form substantially parallel branches.
Dependencies are inferred from the claim text.