Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:

• forming a deposition preventing film on an insulating film formed over said semiconductor substrate;
• forming a plurality of holes in said insulating film in such a manner as to penetrate through said deposition preventing film;
• burying said holes in said insulating film by a first conductive material by chemical vapor deposition by utilizing said deposition preventing removing said deposition preventing film and said insulating film to expose said first conductive material buried, and forming a plurality of first electrodes isolated from one another;
• forming a dielectric film on said first electrodes at a predetermined temperature, said first electrodes being made of Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film;
• and
• forming a film of a second conductive material to serve as second electrodes on said dielectric film;
• said first and second electrodes and said dielectric film together constituting said capacitors.

A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:

• forming a deposition preventing film on an insulating film formed over said semiconductor substrate;
• forming a plurality of holes in said insulating film in such a manner as to penetrate through said deposition preventing film;
• burying said holes in said insulating film by a conductive material by chemical vapor deposition by utilizing said deposition preventing film, and forming a plurality of plugs;
• disposing one first electrode in such a manner as to correspond to each of said plugs, each of said first electrodes being so formed as to keep contact with the top surface of said plug and to be electrically connected to said plug corresponding thereto;
• forming a dielectric film on said first electrodes at a predetermined temperature, said first electrodes being made of Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film;
• and
• forming second electrodes on said dielectric film;
• said first and second electrodes and said dielectric film together constituting said capacitors.

A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:

• forming a plurality of holes in an insulating film formed over said semiconductor substrate;
• forming a film of a first conductive material by sputtering on said insulating film and on an inner surface and a bottom surface of each of said holes;
• removing the film of said first conductive material from said insulating film, and leaving the film of said first conductive material on the inner surface and the bottom surface of said holes as a seed film;
• burying said holes in said insulating film by the same material as said first conductive material by chemical vapor deposition by utilizing said seed film on the inner surface and the bottom surface of said holes;
• removing said insulating film to expose said first conductive material buried, and forming a plurality of first electrodes isolated from one another;
• forming a dielectric film on said first electrodes at a predetermined temperature, a material of said first conductive material being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film;
• and
• forming a film of a second conductive material to serve as second electrodes on said dielectric film;
• said first and second electrodes and said dielectric film together constituting said capacitors.

A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:

• forming a plurality of holes in an insulating material formed over said semiconductor substrate;
• forming a film of a first conductive material on said insulating film and on an inner surface and a bottom surface of each of said holes by chemical vapor deposition;
• removing the film of said first conductive material from said insulating film, and leaving the film of said first conductive material on the inner surface and the bottom surface of said holes as a seed film;
• burying said holes in said insulating film by the same material as said first conductive material by chemical vapor deposition by utilizing said seed film on the inner surface and the bottom surface of said holes;
• removing said insulating film to expose said first conductive material buried, and forming a plurality of first electrodes isolated from one another;
• forming a dielectric film on said first electrodes at a predetermined temperature, said first conductive material being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film;
• and
• forming a film of a second conductive material to serve as second electrodes on said dielectric film;
• said first and second electrodes and said dielectric film together constituting said capacitors.

A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:

• forming a plurality of holes in an insulating film formed over said semiconductor substrate;
• forming a film of a first conductive material by sputtering on said insulating film and on an inner surface and a bottom surface of each of said holes;
• removing the film of said first conductive material from said insulating material, and leaving the film of said first conductive material on the inner surface and the bottom surface of said holes as a seed film;
• forming a film of the same material as said first conductive material by chemical vapor deposition on only the inner surface and the bottom surface of said holes by utilizing said seed film on the inner surface and the bottom surface of said holes to form first electrodes;
• forming a dielectric film on said first electrodes at a predetermined temperature, said first conductive material being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film;
• and
• forming a film of a second conductive material to serve as second electrodes on said dielectric film;
• said first and second electrodes and said dielectric film together constituting said capacitors.

A semiconductor device comprising:

• a semiconductor substrate;
• MOS transistors formed over a main surface of said semiconductor substrate and having a source region and a drain region;
• plugs each being electrically connected to one of said source and drain regions;
• an interlayer insulating film formed on said plugs;
• a deposition preventing film disposed on said interlayer insulating film;
• first electrodes made of Ru, an oxide of Ru, Ir, an oxide of Ir or Pt, formed on an inner surface and a bottom surface of holes so formed in said interlayer insulating film as to penetrate through said deposition preventing film, and electrically connected to said plugs;
• an oxide dielectric film disposed on said first electrodes and on said deposition preventing film;
• and
• second electrodes disposed on said oxide dielectric film;
• said first and second electrodes and said oxide dielectric film together consisting capacitors.

A method of manufacturing a semiconductor device comprising a semiconductor substrate and a memory cell formed with said semiconductor substrate, each of said memory cells including a switching transistor and a capacitor, said transistor having a pair of active regions formed in a surface of said semiconductor substrate and a control electrode formed over said semiconductor substrate between said pair of active regions, an insulating film being formed between said control electrode and said active regions in each memory cell, the method comprising the steps of:

• forming a first conductive film in a pattern, said first conductive layer serving as a first electrode of said capacitor and being electrically connected to one of said pair of active regions with an insulating film formed therebetween, the first conductive film forming step including forming a deposition preventing film defining said pattern and forming a film of a conductive material in said pattern;
• forming an oxide dielectric film on said first conductive layer at a predetermined temperature, said first conductive film being made of Ru, Ir or Pt capable of remaining as an electric conductor even after having been subjected to said predetermined temperature for the oxide dielectric film formation;
• and
• forming a second conductive film on said oxide dielectric film, said second conductive film serving as a second electrode of said capacitor.

A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:

• forming a plurality of holes in an insulating film formed over said semiconductor substrate;
• forming a film of a first conductive material on said insulating film and on an inner surface and a bottom surface of said holes;
• removing the film of said first conductive material from said insulating film, and leaving the film of said first conductive material on the inner surface and the bottom surface of said holes as a seed film;
• burying said holes in said insulating film by the same material as said first conductive material by chemical vapor deposition by utilizing said seed film on the inner surface and the bottom surface of said holes;
• removing said insulating film to expose said buried first conductive material, and forming a plurality of plugs isolated from one another;
• forming a plurality of first electrodes electrically connected to said plugs, respectively, and isolated from one another;
• forming an oxide dielectric film on said first electrodes at a predetermined temperature, a material of said first electrode being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film;
• and
• forming second electrodes on said dielectric film;
• said first and second electrodes and said dielectric film together constituting said capacitors.

A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:

• forming a deposition preventing film in an insulating film formed over said semiconductor substrate;
• forming a plurality of holes in said insulating film in such a manner as to penetrate through said deposition preventing film;
• forming a film of a first conductive material on an inner surface and a bottom surface of each of said holes by chemical vapor deposition by utilizing said deposition preventing film;
• burying said holes in said insulating film by chemical vapor deposition by the same material as said first conductive material by utilizing a seed film on the inner surface and the bottom surface of said holes;
• removing said insulating film to expose said first conductor material buried, and forming a plurality of first electrodes isolated from one another;
• forming a dielectric film on said first electrodes at a predetermined temperature, a material of said first electrode being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film;
• and
• forming a film of a second conductive material to serve as second electrodes on said dielectric film;
• said first and second electrodes and said dielectric film together constituting said capacitors.