Fabrication and bonding of copper sputter targets

A method of fabricating copper sputter targets comprising the steps of:

• heating a copper billet to a temperature between about 500 and 750° C., the copper billet having a purity of at least 99.999 percent;
• warm working the heated copper billet to between about 40 and 80 percent strain;
• cold rolling the warm worked copper billet to apply between about 40 and 80 percent strain and to form a copper plate;
• and
• annealing the copper plate at a temperature between about 250 and 400° C. to form a target blank, the target blank having equiaxed grains, the grains having an average grain size between about 10 and 35 μm and having (111), (200), (220) and (311) orientations with the amount of the grains having each of the orientations being less than about 50 percent.

A method of fabricating copper sputter targets comprising the steps of:

• heating a copper billet to a temperature between about 600 and 700° C., the copper billet having a purity of at least 99.999 percent;
• warm working the heated copper billet to between about 50 and 70 percent strain, the heated billet having a temperature between about 600 and 700° C.;
• cold rolling the warm worked copper billet to apply between about 50 and 70 percent strain and to form a copper plate;
• and
• annealing the copper plate at a temperature between about 300 and 375° C. to form a target blank, the target blank having an average grain size of between about 10 and 30 μm and the target blank containing grains having the (111), (200), (220) and (311) orientations with the amount of the grains having each of the orientations being less than about 50 percent.