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US 2001/0022384 A1Published application
Resistive structure integrated in a semiconductor substrate
OwnerSalvatore Leonardi, Roberto Modicainventors
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Abstract
A resistive structure integrated in a semiconductor substrate and having a suitably doped polysilicon region that is completely surrounded by a dielectric region so that the resistive structure is isolated electrically from other components jointly integrated in the semiconductor substrate.
Claims18
A resistive structure, integrated in a semiconductor substrate, comprising a suitably doped polysilicon region completely surrounded by a dielectric region, so that the resistive structure is isolated electrically from other components jointly integrated in the semiconductor substrate.
An integrated resistive structure, comprising:
- at least one trench having sidewalls formed in a semiconductor substrate;
- a dielectric layer entirely coating all walls of the at least one trench;
- and
- a polysilicon region filling the at least one trench to be isolated dielectrically from the semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.