Back to results
US 2001/0022383 A1Published application
Shallow trench isolation formation with sidewall spacer
OwnerShigeru Kuroda, Yasutoshi Okuno +1inventors
InventorsShigeru Kuroda, Yasutoshi Okuno, Ken Numata
Life of this patent
Estimating the term…
Abstract
An isolation structure which protrudes above the semiconductor surface and sidewall spacers which smooth the topography over said isolation structure.
Claims4
A process for forming an isolation region, comprising the steps of:
- forming an isolation region which protrudes above a semiconductor surface;
- forming a sidewall spacer on said isolation region;
- forming an overlying conductor;
- and
- etching said overlying conductor;
- whereby
- said sidewall spacer reduces the occurrence of filaments and pits.
4 more elements
An integrated circuit structure, comprising:
- active regions of semiconductor material;
- an isolation region which extends above the surface of said active regions of semiconductor material and separates said active regions of semiconductor material;
- and
- a dielectric sidewall spacer;
- whereby said sidewall spacer reduces the occurrence of filaments and pits.
2 more elements
Dependencies are inferred from the claim text.