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AssigneeCanon Kabushiki Kaisha
InventorsMAKOTO HIGASHIKAWA, MASAFUMI SANO
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A process for forming a microcrystalline silicon series thin film by arranging a long substrate in a vacuum chamber so as to oppose an electrode provided in said vacuum chamber and while transporting said long substrate in a longitudinal direction, causing glow discharge between said electrode and said long substrate to deposit said microcrystalline silicon series thin film on said long substrate, wherein a plurality of bar-like shaped electrodes as said electrode are arranged such that they are perpendicular to a normal line of said long substrate and their intervals to said long substrate are all or partially differed, and said glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz, whereby depositing said microcrystalline series thin film on said long substrate. An apparatus suitable for practicing said process.
A process for forming a microcrystalline silicon series thin film by arranging a long substrate in a vacuum chamber so as to oppose an electrode provided in said vacuum chamber and while transporting said long substrate in a longitudinal direction, causing glow discharge between said electrode and said long substrate to deposit said microcrystalline silicon series thin film on said long substrate, wherein a plurality of bar-like shaped electrodes as said electrode are arranged such that they are perpendicular to a normal line of said long substrate and their intervals to said long substrate are all or partially differed, and said glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz, whereby depositing said microcrystalline series thin film on said long substrate.
An apparatus for forming a microcrystalline silicon series thin film on a long substrate, having a portion in which said long substrate is arranged to oppose to an electrode in a vacuum chamber, wherein while transporting said long substrate in a longitudinal direction, glow discharge is caused between said electrode and said long substrate to deposit said microcrystalline series thin film on said long substrate, wherein said apparatus has a plurality of bar-like shaped electrodes as said electrode which are arranged such that they are perpendicular to a normal line of said long substrate and their intervals to said long substrate are all or partially differed and a high frequency power source for causing said glow discharge using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz.
Dependencies are inferred from the claim text.