Method for fabricating an electronic device
AssigneeMatsushita Electronics Corporation
InventorsToshihiko Nagai, Yuichi Miyoshi
Life of this patent
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Abstract
After forming a processed film onto the underlying film formed on the substrate, the processed film is dry etched using a mask pattern so as to form an etched pattern. After the reaction product deposited on a wall of the etched pattern is removed by using the first cleaning solution having relatively low power to etch the processed film and the second cleaning solution having relatively high power to etch the processed film in that order, the etched pattern or its vicinity is rinsed with water.
Claims14
A method for fabricating an electronic device comprising:
- a first process of forming an insulator film onto a conductive pattern formed on a substrate;
- a second process of forming an opening portion in said insulator film by dry etching said insulator film using a resist pattern as a mask;
- a third process of removing a reaction product deposited on a wall or a bottom surface of said opening portion;
- and
- a fourth process of rinsing an inside of said opening portion rid of said reaction product with water;
- the third process including a process of removing said reaction product by using a first cleaning solution having relatively low power to etch said insulator film and a second cleaning solution having relatively high power to etch said insulator film in that order.
A method for fabricating an electronic device comprising:
- a first process for forming a processed film on an underlying film formed on a substrate;
- a second process for forming an etched pattern by dry etching said processed film using a mask pattern;
- a third process for removing a reaction product deposited on a wall of said etched pattern;
- and
- a fourth process for rinsing said etched pattern or a vicinity thereof rid of said reaction product with water;
- the third process containing a process for removing said reaction product by using a first cleaning solution having relatively low power to etch said processed film and a second cleaning solution having relatively high power to etch said processed film in that order.
Dependencies are inferred from the claim text.