Method for fabricating semiconductor capacitor
AssigneeHyundai Electronics Industries Co., Ltd.
InventorSoon-Hong Hwang
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Abstract
A method of fabricating a semiconductor capacitor is disclosed. An impurity layer is formed on a semiconductor substrate. An interlayer insulating film is disposed on an upper surface of the impurity layer and the semiconductor substrate. A contact hole is selectively etched through the interlayer insulating film to the impurity layer. A conductive plug is formed in the contact hole. A metal film pattern having an irregular surface area is disposed on the conductive plug. A dielectric substance film is located directly on the irregular surface of the metal film pattern. A metal electrode is formed on the dielectric substance film.
Claims20
A method of fabricating a semiconductor capacitor, comprising:
- forming an impurity layer on a semiconductor substrate;
- forming an interlayer insulating film on an upper surface of the impurity layer and the semiconductor substrate;
- forming a contact hole through the interlayer insulating film to the impurity layer;
- forming a conductive plug in the contact hole;
- forming a metal film pattern on the conductive plug;
- forming an irregularity on a surface of the metal film pattern;
- forming a dielectric substance film on the irregular surface of the metal film pattern;
- and
- forming a metal electrode on the dielectric substance film.
The method according to claim 11, wherein forming the silicide layer comprises annealing at a temperature of between about 500° C. and about 1100° C.
A method of fabricating a semiconductor capacitor having a substrate and an impurity layer on the substrate, the method comprising:
- forming a conductive plug in contact with the impurity layer;
- forming a metal film pattern on the conductive plugs, the metal film pattern having an irregular surface;
- and
- forming a dielectric substance film on the metal film pattern.
A semiconductor capacitor, comprising:
- a semiconductor substrate including an impurity layer;
- a conductive plug contacting the impurity layer of the substrate;
- a metal film pattern contacting the conductive plug;
- and
- a dielectric substance film contacting the metal film pattern.
Dependencies are inferred from the claim text.