Semiconductor device

Abstract

A semiconductor device includes a semiconductor element, an anisotropic graphite, a first bonding layer, an insulating member, a metal plate, a second bonding layer, and a third bonding layer. The semiconductor element has a chip shape. The anisotropic graphite has one surface to which the semiconductor element is disposed. A direction along the one surface is a c-axis direction of the anisotropic graphite. The first bonding layer bonds the semiconductor element to the one surface of the anisotropic graphite. The insulating member has a plate shape, is disposed across the anisotropic graphite from the semiconductor element, and insulates the anisotropic graphite. The metal plate is made of a metal material, has a plate shape, and is disposed between the anisotropic graphite and the insulating member. The second bonding layer bonds the anisotropic graphite and the metal plate. The third bonding layer bonds the metal plate and the insulating member.

Dependencies are inferred from the claim text.