Integrated circuit structures having backside high voltage capacitors for front side GaN-based devices

An integrated circuit structure, comprising:

• a front side structure comprising:
• a GaN-based device layer;
• one or more silicon-based transistors;
• one or more metallization layers above the GaN-based device layer and the one or more silicon-based transistors;
• a backside structure below and coupled to the GaN-based layer and the one or more silicon-based transistors, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a front side structure comprising:
• a GaN-based device layer;
• and
• one or more metallization layers above the GaN-based device layer;
• a backside structure below and coupled to the GaN-based layer, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a front side structure comprising:
• a GaN-based device layer;
• one or more silicon-based transistors;
• one or more metallization layers above the GaN-based device layer and the one or more silicon-based transistors;
• a backside structure below and coupled to the GaN-based layer and the one or more silicon-based transistors, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.