Back to results
US 12,772,823 B2Granted
Backside contact with full wrap-around contact
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, Kisik Choi, Brent A. Anderson, Lawrence A. Clevenger
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a source/drain having a height, a length, and a width. A full wrap-around contact surrounds a partial length of the source/drain. The full wrap-around contact includes a frontside recessed wrap-around contact from a front side of the source/drain and a backside conductive contact from a back side of the source/drain.
Claims20
A semiconductor device, comprising:
- a source/drain disposed between adjacent gate structures, the source/drain having a front side, a back side opposite the front side, opposite sides extending between the front side and the back side, and a length extending between the adjacent gate structures;
- and
- a full wrap-around contact on the front side, the back side, and the opposite sides of the source/drain and surrounding the source/drain along at least a portion of the length of the source/drain,
- wherein the full wrap-around contact includes a frontside recessed wrap-around contact on the front side and the opposite sides of the source/drain, and a backside conductive contact on the back side of the source/drain and in direct contact with the frontside recessed wrap-around contact.
1 more element
A backside power connection device, comprising:
- a backside power rail on a backside power delivery network;
- a backside interlayer dielectric layer on the backside power rail and the backside power delivery network;
- a backside conductive contact in the backside interlayer dielectric layer, wherein the backside conductive contact is in electrical contact with the backside power rail;
- a first source/drain having a top side, a back side opposite the top side, and opposite sides extending between the top side and the back side, the back side of the first source/drain being on the backside conductive contact;
- and
- a first frontside recessed wrap-around contact on the top side and the opposite sides of the first source/drain, wherein the backside conductive contact is in direct contact with the first frontside recessed wrap-around contact.
3 more elements
Dependencies are inferred from the claim text.