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US 12,772,817 B2Granted
Semiconductor device
AssigneeKioxia Corporation
InventorShingo Honda
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first layer including a first recess portion on an upper surface; and a second recess portion that extends from a bottom surface of the first recess portion in the first layer, and the second recess portion has a tapered shape in which a width in a first direction along a surface direction of the first layer reduces from the bottom surface of the first recess portion in a depth direction of the first layer.
Claims7
A semiconductor device comprising:
- a stacked body having a plurality of conductive layers and a plurality of first insulating layers alternately stacked, the stacked body having a step portion obtained by processing the plurality of conductive layers in a step shape;
- a second insulating layer covering the step portion and including first and second recess portions on an upper surface;
- a first layer filling the first recess portions;
- a second layer filling the second recess portions;
- a plate-shaped portion penetrating the first layer, extending in a stacking direction of the stacked body of the first insulating layer and the stacked body, and extending in a first direction intersecting the stacking direction;
- and
- a contact penetrating the second layer, extending in the stacking direction of the second insulating layer, and connected to any of the plurality of conductive layers,
- wherein the plate-shaped portion has a tapered shape with a width in the first direction that reduces from an upper surface of the first layer in a direction towards a lower surface, and
- the contact has a tapered shape with a width in the first direction that reduces from an upper surface of the second layer in a direction towards a lower surface.
6 more elements
Dependencies are inferred from the claim text.