Integrated circuit with electrostatic discharge structure

An integrated circuit, comprising:

• a first well of a first conductivity type formed a polygon shape;
• and
• a plurality of first active areas arranged in the first well wherein each of the plurality of first active areas is disposed in a corresponding one in a plurality of cell rows that are arranged along a first direction,
• wherein at least one first area in the plurality of first active areas is coupled to an input/output (I/O) pad and arranged in at least one flange portion of the first well,
• wherein at least one second area in the plurality of first active areas is coupled to a first supply voltage terminal and arranged in a web portion of the first well.

An integrated circuit, comprising:

• a first active area of a first conductivity type and a second active area of a second conductivity type different from the first conductivity type, wherein the first active area and the second active area are disposed in a first well of the second conductivity type;
• and
• a first gate structure extending in a first direction to pass through the first and second active areas, wherein the first active area and the first gate structure are coupled to an input/output (I/O) pad, and the second active area is coupled to a first supply voltage terminal,
• wherein the first active area, the first gate structure, and the first well are included in a first transistor, wherein the first transistor and the second active area are configured to discharge a first electrostatic discharge (ESD) current flowing between the I/O pad and the first supply voltage terminal.