US 12,772,558 B2 · Domain merger cell to abut power domains for chip area reduction

Domain merger cell to abut power domains for chip area reduction

AssigneeQUALCOMM Incorproated

InventorsKamesh Medisetti, Sharad Kumar Gupta, Sudesh Chandra Srivastava, Somesh Agarwal, Udayakiran Kumar Yallamaraju, Anand Ashok Baligatti, Girish T P, Ankur Mehrotra, Gousulu Kandukuru, Abhinav Chauhan, Amit Kashyap, Parissa Najdesamii

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Abstract

A chip includes a merger cell including a first p-type length of diffusion (LOD) region extending in a first direction, a first n-well underneath the first p-type LOD region, a first supply rail configured to receive a first supply voltage, and a first n-tap coupling the first n-well to the first supply rail. The merger cell also includes a second p-type length of diffusion (LOD) region extending in the first direction, a second n-well underneath the second p-type LOD region, a second supply rail configured to receive a second supply voltage different from the first supply voltage, and a second n-tap coupling the second n-well to the second supply rail.

Claims20

Dependent claims

A chip, comprising:

a merger cell, wherein the merger cell comprises:
a first p-type length of diffusion (LOD) region extending in a first direction;
a first n-well underneath the first p-type LOD region;
a first supply rail configured to receive a first supply voltage;
a first n-tap coupling the first n-well to the first supply rail;
a second p-type length of diffusion (LOD) region extending in the first direction;
a second n-well underneath the second p-type LOD region;
a second supply rail configured to receive a second supply voltage different from the first supply voltage;
and
a second n-tap coupling the second n-well to the second supply rail.

7 more elements

Dependencies are inferred from the claim text.