4H-SiC MOSFET device and manufacturing method thereof

A method for manufacturing a MOSFET device, comprising:

• forming a source terminal, including:
• implanting, at a first face of a semiconductor body, a doped region, and
• forming a metal layer on the first face of the semiconductor body and electrically coupled to the doped region;
• and
• forming a drain terminal at a second face of the semiconductor body that is opposite the first face along a direction,
• wherein the implanting the doped region includes:
• forming a first sub-region having a first doping concentration and a first maximum depth in the semiconductor body, the forming the first sub-region including performing a first implant of dopant species having a first type of conductivity with a first implant energy;
• and
• forming a second sub-region having a second doping concentration and a second maximum depth in the semiconductor body, the forming the second sub-region including performing said first implant and, thereafter, performing a second implant of dopant species having the first type of conductivity with a second implant energy higher than the first implant energy,
• wherein at least one of the second doping level and the second maximum depth has a value which is higher than a respective value of the first doping level and the first maximum depth, and
• the forming said metal layer includes forming the metal layer in electrical contact with the source terminal exclusively through said second sub-region, the metal layer being in direct physical contact with the source terminal at only the second sub-region of the source terminal.