Memory cell and method for changing properties of an electrode

A memory cell, comprising:

• a first electrode;
• a second electrode;
• and
• a memory element disposed between the first electrode and the second electrode, the memory element comprising a spontaneously polarizable material,
• the first electrode, the second electrode, and the memory element forming a memory capacitor, wherein the first electrode and/or the second electrode comprises:
• an electrically conductive electrode layer, and
• a functional layer in direct physical contact with the memory element, wherein the functional layer is configured to store and release oxygen by application of an electric field via the first electrode and the second electrode.

A memory cell comprising:

• a first electrode;
• a second electrode;
• and
• a memory element disposed between the first electrode and the second electrode, the memory element comprising a spontaneously polarizable material, wherein an average grain width of the spontaneously polarizable material is greater than 20 nm;
• the first electrode, the second electrode, and the memory element forming a memory capacitor, wherein at least one of the first electrode or the second electrode comprises:
• an electrically conductive electrode layer, and
• a functional layer comprising a semi-conductive material, wherein the functional layer is
• in direct physical contact with the memory element.

A memory cell comprising:

• a first electrode;
• a second electrode;
• and
• a memory element disposed between the first electrode and the second electrode, the memory element comprising a spontaneously polarizable material;
• the first electrode, the second electrode, and the memory element forming a memory capacitor, wherein at least one of the first electrode or the second electrode comprises:
• an electrically conductive electrode layer, and
• a functional layer comprising a semi-conductive material, wherein the functional layer is in direct physical contact with the memory element, and
• wherein the first electrode comprises a first functional layer and the second electrode comprises a second functional layer, and wherein the first functional layer comprises a first oxygen concentration different from a second oxygen concentration of the second functional layer.

A memory cell comprising:

• a first electrode;
• a second electrode;
• and
• a memory element disposed between the first electrode and the second electrode, the memory element comprising a spontaneously polarizable material, wherein the spontaneously polarizable material is configured to change its material properties based on at least one of a transfer of oxygen from the functional layer, a transfer of oxygen to the functional layer, an amount of oxygen incorporated in the semi-conductive material of the functional layer, or combinations thereof;
• the first electrode, the second electrode, and the memory element forming a memory capacitor, wherein at least one of the first electrode or the second electrode comprises:
• an electrically conductive electrode layer, and
• a functional layer comprising a semi-conductive material, wherein the functional layer is
• in direct physical contact with the memory element.