External crucible accommodating silicon melt and silicon single crystal ingot growth apparatus including the same

An apparatus for growing a silicon single crystal, the apparatus comprising:

• a chamber;
• an internal quartz crucible provided in an interior of the chamber and configured to accommodate a silicon melt;
• an external graphic crucible divided into at least two sections and including a body configured to accommodate the internal quartz crucible;
• a heater provided in the interior of the chamber and disposed around the external crucible;
• a coolant tube provided at an upper portion of the interior of the chamber in a fixed state and disposed around an ingot rising while being grown from the silicon melt;
• a heat shield provided at an upper portion of the quartz crucible;
• and
• a support configured to rotate the external crucible, wherein a size of an outer diameter of every section of the external graphite crucible is the same, and a size of an inner diameter of every section of the external graphite crucible is the same, wherein at least one section of the external graphite crucible comprises a coating surface mounted on an outer circumferential surface of the body not contacting the silicon melt, wherein a thickness of the at least one section of the body having the coating surface is smaller than a thickness of the other sections of the body of the external graphite crucible, wherein the at least one section of the at least two sections is formed to have different thermal conductivities from the remaining sections of the at least two sections, and wherein a greater amount of heat is transferred to a section among the at least two sections of the external graphite crucible by a convection flow of the silicon melt due to an asymmetrical heat distribution in an interior of the internal quartz crucible with reference to a magnetic field direction.