Activator, method of forming thin film using activator, semiconductor substrate fabricated using method, and semiconductor device including semiconductor substrate

A method of forming a thin film on a substrate, comprising injecting an activator into a chamber to substitute a ligand of a precursor compound adsorbed on a surface of a loaded substrate,

• wherein the substituting a ligand is a self-limiting surface reaction, the precursor comprises an aminosilane compound, and the activator is used in a process in which a thin film is formed by a separate reaction gas after the ligand substitution;
• wherein the activator comprises a halogenated compound, and the halogenated compound comprises one or more selected from hydrogen iodide, methyl iodide, ethyl iodide, propyl iodide, butyl iodide, isopropyl iodide, and tert-butyl iodide;
• wherein the activator activates a laminated film formed from one or more precursor compounds selected from the group consisting of Al, Si, Ti, V, Co, Ni, Cu, Zn, Ga, Ge, Se, Zr, Nb, Mo, Ru, Rh, In, Sn, Sb, Te, Hf, Ta, W, Re, Os, Ir, La, Ce, and Nd,
• wherein the thin film is prepared by using the precursor compound represented by Chemical Formula 1 below;
• wherein the thin film is applied to formation of the thin film for use as a diffusion barrier film, an etching stop film, an electrode film, a dielectric film, a gate insulating film, a block oxide film, or a charge trap;
• wherein the activator is used in a process in which a thin film is formed by a separate reaction gas after the ligand substitution,
• wherein M comprises one or more selected from Al, Si, Ti, V, Co, Ni, Cu, Zn, Ga, Ge, Se, Zr, Nb, Mo, Ru, Rh, In, Sn, Sb, Te, Hf, Ta, W, Re, Os, Ir, La, Ce, and Nd;
• L1, L2, L3, and L4 are —H, —X, —R, —OR, or —NR2 and are the same or different, wherein —X is F, Cl, Br. or I;
• and R is C1-C10 alkyl, C1-C10 alkene, or C1-C10 alkane and is linear or circular.