Polishing composition, polishing method, and method of manufacturing semiconductor substrate

Abstract

The present invention provides a mechanism capable of reducing a polishing removal rate of polysilicon and further reducing defects (organic residues, for example) on a surface of polysilicon after polishing. The present invention is a polishing composition containing: abrasive grains; a removal rate inhibitor that reduces a polishing removal rate of polysilicon; and a defect reducing agent that reduces defects on a surface of polysilicon, wherein the removal rate inhibitor is a water-soluble polymer having a polyoxyalkylene chain, which has a number average molecular weight of 200 or more and 600 or less, and in which a content of a component with a molecular weight of 700 or more is more than 0% by mass and less than 1% by mass.

Dependencies are inferred from the claim text.