Method for manufacturing high-voltage transistors on a silicon-on-insulator type bulk

A method of manufacturing a semiconductor device, comprising:

• forming a hard mask on a silicon-on-insulator type bulk, wherein the silicon-on-insulator type bulk comprises a semiconductor film having a first thickness, electrically insulated from a carrier bulk by a buried dielectric layer, the hard mask comprising a high-voltage mask portion covering the semiconductor film in a high-voltage region and also comprising a first opening uncovering the semiconductor film in a localized monolithic region;
• oxidizing the semiconductor film in the localized monolithic region;
• selectively etching to remove the oxidized semiconductor film and the buried dielectric layer at the first opening in the localized monolithic region;
• etching selectively the hard mask to remove the high-voltage mask portion, such that the hard mask comprises a second opening uncovering the semiconductor film in the high-voltage region;
• epitaxially growing the semiconductor film to a second thickness at the second opening in the high-voltage region, such that the second thickness is at least 13 nm greater than the first thickness;
• and
• epitaxially growing the carrier bulk in the localized monolithic region simultaneously with the epitaxially growing of the semiconductor film.

A method of manufacturing a semiconductor device on a silicon-on-insulator type bulk comprising a semiconductor film having a first thickness electrically insulated from a carrier bulk by a buried dielectric layer, the method comprising:

• forming a hard mask on the silicon-on-insulator type bulk, the hard mask covering the semiconductor film in a low-voltage region and in a high-voltage region while uncovering the semiconductor film in a localized monolithic region;
• oxidizing the semiconductor film in the localized monolithic region;
• selectively etching to remove the oxidized semiconductor film and the buried dielectric layer in the localized monolithic region to expose the carrier bulk;
• etching the hard mask to remove the hard mask from the high-voltage region while the hard mask remains covering the semiconductor film in the low-voltage region;
• epitaxially growing the semiconductor film in the high-voltage region to a second thickness less than 25 nm simultaneously with epitaxially growing the carrier bulk in the localized monolithic region, the semiconductor film remaining at the first thickness in the low-voltage region throughout;
• forming a high-voltage transistor in and on the semiconductor film having the second thickness in the high-voltage region;
• forming a low-voltage transistor in and on the semiconductor film having the first thickness in the low-voltage region;
• and
• forming a transistor in and on the epitaxially grown carrier bulk in the localized monolithic region.