Semiconductor device and method of fabricating the same

A method of fabricating a semiconductor device, comprising:

• forming active patterns extending in a second direction on a substrate, the substrate comprising a first region and a second region;
• forming sacrificial gate patterns crossing the active patterns and extending in a first direction;
• forming a first spacer layer on side surfaces of the active patterns and side surfaces of the sacrificial gate patterns;
• performing a first directional deposition process on the first spacer layer in the first direction and in a direction opposite to the first direction to form a second spacer layer on the first spacer layer;
• removing portions of the active patterns that are exposed between the sacrificial gate patterns to form recesses between the sacrificial gate patterns;
• forming source/drain patterns in the recesses;
• and
• replacing the sacrificial gate patterns with gate electrodes,
• wherein forming of the recesses comprises:
• forming first recesses in the first region;
• and
• forming second recesses in the second region,
• wherein the forming of the source/drain patterns in the recesses comprises:
• forming first source/drain patterns in the first recesses;
• and
• forming second source/drain patterns in the second recesses,
• and wherein the method further comprises forming a third spacer layer by performing a second directional deposition process between the forming of the first source/drain patterns and the forming of the second source/drain patterns.