Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

Abstract

A silicon carbide epitaxial substrate includes a silicon carbide substrate and a silicon carbide epitaxial layer. The silicon carbide epitaxial layer is on the silicon carbide substrate. The silicon carbide epitaxial layer has a main surface located opposite to an interface between the silicon carbide substrate and the silicon carbide epitaxial layer. An area density of a pit in the main surface is 1/cm2 or less. An area density of a bump in the main surface is less than 0.7/cm2. An area of the pit is 100 μm2 or less, and an area of the bump is 100 μm2 or less when viewed in a direction perpendicular to the main surface. A depth of the pit is 0.01 μm to 0.1 μm and a height of the bump is 0.01 μm to 0.1 μm in the direction perpendicular to the main surface.

Dependencies are inferred from the claim text.