MOSFET including heavy metal to improve reverse recovery characteristics

A semiconductor device, comprising:

• a first electrode;
• a second electrode;
• a semiconductor part located between the first electrode and the second electrode;
• a gate electrode located in the semiconductor part, the gate electrode extending from the second electrode toward the first electrode;
• and
• a structure body located between the gate electrode and the first electrode, the structure body extending from the gate electrode side toward the first electrode side in the semiconductor part,
• the semiconductor part including
• a first layer located on the first electrode, the first layer being electrically connected to the first electrode, the first layer being of a first conductivity type,
• a second layer located on the first layer, the second layer including a heavy metal, the second layer being of the first conductivity type,
• a third layer located on the second layer, the third layer including the heavy metal, the third layer having a lower concentration of the heavy metal than the second layer, the third layer being of the first conductivity type,
• a fourth layer located on the third layer, the fourth layer facing the gate electrode via a gate insulating film, the fourth layer being electrically connected to the second electrode, the fourth layer being of a second conductivity type, and
• a fifth layer located on the fourth layer, the fifth layer being electrically connected to the second electrode, the fifth layer being of the first conductivity type,
• the structure body including
• a silicide layer contacting the second layer,
• an insulating layer located on the silicide layer,
• a conductive body located on the insulating layer, the conductive body extending from under the gate electrode toward the insulating layer, the conductive body being electrically isolated from the gate electrode, and
• an insulating film located between the conductive body and the second layer and between the conductive body and the third layer,
• a bottom surface of the silicide layer and at least a portion of a side surface of the silicide layer contacting the second layer.