Capacitor component

A capacitor component, comprising:

• a first capacitor structure including a substrate having a plurality of first trenches disposed on one surface of the substrate, and a first capacitor layer disposed on the one surface of the substrate and inner walls of the plurality of first trenches, the first capacitor layer including a first dielectric layer and first and second electrodes disposed to face each other with the first dielectric layer interposed therebetween;
• a second capacitor structure disposed on the first capacitor structure, and including an insulating layer having a plurality of second trenches disposed on one surface of the insulating layer, and a second capacitor layer disposed on the one surface of the insulating layer and inner walls of the plurality of second trenches, the second capacitor layer including a second dielectric layer and third and fourth electrodes disposed to face each other with the second dielectric layer interposed therebetween,
• first and second external electrodes disposed on the insulating layer, and connected to the first and second electrodes, respectively;
• and
• third and fourth external electrodes disposed on the insulating layer, and connected to the third and fourth electrodes, respectively,
• wherein the insulating layer includes silicon oxide, and
• when an interval between adjacent trenches among the plurality of first trenches is D1, an interval between adjacent trenches among the plurality of second trenches is D2, a depth of a trench among the plurality of first trenches is T1, and a depth of a trench among the plurality of second trenches is T2, D1>D2 and/or T1>T2 are satisfied.