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US 12,757,714 B2Granted
Capacitive element and semiconductor device
AssigneeAblic Inc.
InventorMitsuhiro Yoshimura
Life of this patent
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Abstract
A capacitive element 100 includes a P-type semiconductor substrate 110, a capacitor structure 150 formed above the P-type semiconductor substrate 110, and a shielding layer 130 formed between the P-type semiconductor substrate 110 and the capacitor structure 150 and electrically connected to the P-type semiconductor substrate 110. Preferably, a pair of electrodes 150a and 150b in the capacitor structure 150 are at a first potential V1 and a second potential V2 respectively, and the P-type semiconductor substrate 110 and the shielding layer 130 are at a third potential V3.
Claims7
A capacitive element, comprising:
- a semiconductor substrate;
- a capacitor structure formed above the semiconductor substrate;
- and
- a shielding layer formed between the semiconductor substrate and the capacitor structure and electrically connected to the semiconductor substrate,
- a well region is formed below the shielding layer on a front surface of the semiconductor substrate,
- the well region is formed to overlap with the shielding layer so as to surround a periphery of the shielding layer in a plan view,
- wherein a pair of electrodes in the capacitor structure are at a first potential and a second potential respectively,
- the well region and the shielding layer are at a third potential, and
- a range of the third potential is between the first potential and the second potential.
6 more elements
Dependencies are inferred from the claim text.