Semiconductor device having fuse component
AssigneeNanya Technology Corporation
InventorYing-Cheng Chuang
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Abstract
A semiconductor device includes a substrate, a plurality of gate structures, and a fuse component. The substrate has an active region and a peripheral region surrounding the active region. The gate structures are disposed in the active region of the substrate. The fuse component is disposed at the peripheral region of the substrate. The fuse component has a poly silicon portion having a bottom tip pointing to the substrate, a dielectric film between the substrate and the poly silicon portion, and a conductive portion on the poly silicon portion. A method of forming a semiconductor device is also disclosed.
Claims10
A semiconductor device, comprising:
- a substrate having an active region and a peripheral region surrounding the active region;
- a plurality of gate structures disposed in the active region of the substrate;
- and
- a fuse component disposed at the peripheral region of the substrate, wherein the fuse component has a poly silicon portion having a bottom tip pointing to the substrate, a dielectric film between the substrate and the poly silicon portion, and a conductive portion on the poly silicon portion.
Dependencies are inferred from the claim text.