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US 12,618,158 B2Granted
Semiconductor device manufacturing method
AssigneeFuji Electric Co., Ltd.
InventorsYuya Takahashi, Shunsuke Tanaka
Life of this patent
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Abstract
Provided is a manufacturing method of a semiconductor device, comprising: performing a zincate treatment on a first metal layer provided above a semiconductor substrate with a zincate solution; forming a nickel-plated layer above the first metal layer; and forming a gold-plated layer above the nickel-plated layer, wherein in the performing the zincate treatment, a flow rate of the zincate solution supplied to a bath for performing the zincate treatment is 16 L/min or more and 20 L/min or less.
Claims20
A manufacturing method of a semiconductor device, comprising:
- performing a zincate treatment on a first metal layer provided above a semiconductor substrate with a zincate solution;
- forming a nickel-plated layer above the first metal layer;
- and
- forming a gold-plated layer above the nickel-plated layer, wherein
- in the performing the zincate treatment, a flow rate of the zincate solution supplied to a bath for performing the zincate treatment is 16 L/min or more and 20 L/min or less.
2 more elements
Dependencies are inferred from the claim text.