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US 12,604,726 B2Granted
Electronic fuse
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsXinshu Cai, Shyue Seng Tan, Eng Huat Toh
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to e-fuse structures and methods of manufacture. The structure includes: a silicided fuse structure which includes a narrow portion and wider, end portions; dummy structures on opposing sides of the silicided fuse structure; and sidewall spacer material separating the dummy structures from the silicided fuse structure.
Claims19
A structure comprising:
- a silicided fuse structure on an insulator material, the silicided fuse structure comprising, in a horizontal orientation with respect to an upper surface of an underlying insulator material, a width with a narrow middle portion and a width with wider, end portions;
- polysilicon structures on opposing sides of the silicided fuse structure;
- and
- sidewall spacer material separating the polysilicon structures from the silicided fuse structure;
- and
- sidewall spacers on outer sidewalls of the polysilicon structures,
- wherein the polysilicon structures have a wider portion corresponding to the narrow middle portion of the silicided fuse structure and a narrower portion corresponding to the wider, end portions, in a horizontal orientation.
4 more elements
A structure comprising:
- dummy gate structures comprising semiconductor material;
- sidewall spacers on the dummy gate structures;
- a polysilicon material between the dummy gate structures and contacting the sidewall spacers, the polysilicon material comprising, in a horizontal orientation, a narrow middle portion and wider, end portions;
- and
- a silicide on the polysilicon material including on the narrow portion and the wider, end portions,
- wherein the dummy gate structures comprise, in the horizontal orientation, a wider middle portion corresponding to the narrow middle portion of the polysilicon material and narrow end portions corresponding to the wider end portions of the polysilicon material.
3 more elements
Dependencies are inferred from the claim text.