Systems and methods for selective metal-containing hardmask removal

A semiconductor processing method comprising:

• flowing a pre-etching precursor into a processing region of a semiconductor processing chamber, wherein a substrate is housed within the processing region, and wherein the substrate defines an exposed region of a metal-and-nitrogen-containing hardmask material, an exposed region of a metal-containing material, and an exposed region of a material characterized by a dielectric constant of less than or about 4.0;
• contacting the substrate with the pre-etching precursor to at least partially oxidize the exposed region of the metal-containing material;
• halting delivery of the pre-etching precursor;
• flowing an etchant precursor into the processing region of the semiconductor processing chamber;
• contacting the substrate with the etchant precursor;
• and
• selectively removing at least a portion of the metal-and-nitrogen-containing hardmask material relative to the material characterized by the dielectric constant of less than or about 4.0.

A semiconductor processing method comprising:

• flowing an etchant precursor into a processing region of a semiconductor processing chamber, wherein a substrate is housed within the processing region, and wherein the substrate defines an exposed region of a metal-containing hardmask material;
• contacting the substrate with the etchant precursor;
• removing at least a portion of the metal-containing hardmask material relative to one or more other materials on the substrate;
• halting delivery of the etchant precursor;
• flowing a post-etching precursor into the processing region of the semiconductor processing chamber;
• contacting the substrate with the post-etching precursor;
• and
• removing a fluorine-containing residue from the substrate.