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US 12,604,490 B2Granted
Memory device having a container-shaped electrode and method for fabricating the same
AssigneeNanya Technology Corporation
InventorsYao-Hsiung Kung, Chao-Wen Lay
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Abstract
The present disclosure provides a memory device and a manufacturing method of the memory device. The memory device includes: a substrate, a landing area over the substrate, a bottom electrode over the landing area, and a high-k layer over the bottom electrode, wherein the bottom electrode includes a lower portion over the landing area, a middle portion over the lower portion, and an upper portion over the middle portion, and the bottom electrode has a container-shaped profile.
Claims15
A method of manufacturing a memory device, comprising:
- forming a first support layer over a substrate;
- forming a first material layer over the first support layer, wherein the first material layer is doped with an N-type dopant;
- forming a second material layer over the first material layer;
- forming a second support layer over the second material layer;
- forming a third material layer over the second support layer, wherein the third material layer is doped with a P-type dopant;
- performing a dry etch operation to form a first recess, wherein the first recess penetrates the first material layer, the second material layer, and the third material layer;
- and
- forming a bottom electrode in the first recess.
5 more elements
Dependencies are inferred from the claim text.