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US 12,604,463 B2Granted
Memory device having ultra-lightly doped region and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorChung-Lin Huang
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Abstract
The present application provides a memory device having an ultra-lightly doped region and a manufacturing method of the memory device. The memory device includes a semiconductor substrate including a word line extending into the semiconductor substrate, wherein the semiconductor substrate is defined with a source region, a drain region and an ultra-lightly doped region under the drain region, the word line is disposed between the source region and the drain region, and the ultra-lightly doped region is disposed at a sidewall of the word line.
Claims5
A memory device, comprising:
- a semiconductor substrate including a word line extending into the semiconductor substrate and a plug extending into the semiconductor substrate and disposed adjacent to the word line,
- wherein the semiconductor substrate is defined with a source region, a drain region opposite to the source region, and an ultra-lightly doped region under the drain region, the word line is disposed between the source region and the drain region, and the ultra-lightly doped region is disposed at a sidewall of the word line;
- wherein the ultra-lightly doped region includes a first ultra-lightly doped region having a first conductivity type and a second ultra-lightly doped region having a second conductivity type different from the first conductivity type;
- wherein a length of the word line is substantially greater than or equal to a depth of the ultra-lightly doped region.
1 more element
Dependencies are inferred from the claim text.