Memory device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorNam Jae Lee
Life of this patent
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Abstract
A memory device and a method of manufacturing the memory device includes a stacked structure having a cell region and a slimming region. The memory device also includes a plurality of vertical channel structures each including memory cells and vertically passing through the stacked structure in the cell region. The memory device further includes a plurality of support structures each having a structure of each of the vertical channel structures and vertically passing through the stacked structure in the slimming region. The plurality of support structures have different heights depending on the shape of the stacked structure in the slimming region.
Claims4
A method of manufacturing a memory device, the method comprising:
- providing a stacked structure having a cell region and a slimming region;
- forming vertical channel structures in the stacked structure in the cell region;
- forming support structures, in the stacked structure in the slimming region simultaneously with forming the vertical channel structures, wherein the support structures have the same structure as the vertical channel structures;
- and
- performing a slimming process so that the stacked structure in the slimming region and the support structures have a stepped structure.
Dependencies are inferred from the claim text.