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US 12,225,717 B2Granted
Semiconductor device with dielectric structure having enlargemant portion surrounding word line
AssigneeNanya Technology Corporation
InventorChung-Lin Huang
Life of this patent
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Abstract
A semiconductor device includes a substrate, a passing word line in the substrate, and a dielectric structure surrounding the passing word line. The dielectric structure has an enlargement portion at a bottom of the dielectric structure, and a maximum width of the enlargement portion of the dielectric structure is wider than a width of a top of the dielectric structure.
Claims7
A semiconductor device, comprising:
- a substrate;
- a passing word line in the substrate;
- and
- a dielectric structure surrounding the passing word line, wherein the dielectric structure has an enlargement portion at a bottom of the dielectric structure, and a maximum width of the enlargement portion of the dielectric structure is wider than a width of a top of the dielectric structure, the enlargement portion comprises a top portion and a bottom portion meeting at the maximum width of the enlargement portion, a width of the top portion of the enlargement portion of the dielectric structure gradually increases downward to the maximum width, and a width of the bottom portion of the enlargement portion of the dielectric structure gradually decreases, and wherein the top portion of the enlargement portion of the dielectric structure is in contact with the substrate.
1 more element
Dependencies are inferred from the claim text.