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US 12,225,709 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorChung-Lin Huang
Life of this patent
Estimating the term…
Abstract
A manufacturing method of a semiconductor device includes forming an opening in a substrate, implanting a dopant in the substrate from a sidewall of the opening such that a doping region is formed in the substrate at the sidewall of the opening, filling a dielectric material in the opening to form a first dielectric structure after implanting the dopant in the substrate from the sidewall of the opening, and forming a passing word line in the dielectric structure.
Claims19
A manufacturing method of a semiconductor device, comprising:
- forming an opening in a substrate;
- implanting a dopant in the substrate from a sidewall of the opening such that a doping region is formed in the substrate at the sidewall of the opening;
- after implanting the dopant in the substrate from the sidewall of the opening, filling a dielectric material in the opening to form a first dielectric structure, such that the doping region is in direct contact with the sidewall of the first dielectric structure;
- and
- forming a passing word line in the first dielectric structure.
2 more elements
A semiconductor device, comprising:
- a substrate comprising a doped active region;
- a first dielectric structure in the substrate;
- a passing word line in the first dielectric structure;
- an active word line in the doped active region of the substrate and is adjacent to the passing word line;
- and
- a doping region in the substrate and in contact with a sidewall of the first dielectric structure, wherein the doping region is at a bottom of the sidewall of the first dielectric structure and between the active word line and the first dielectric structure, and wherein the doping region and the doped active region have the same conductivity type.
3 more elements
Dependencies are inferred from the claim text.