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US 12,218,182 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsKwan Woo Do, Wan Joo Maeng, Jeong Yeop Lee, Ki Vin Im
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Abstract
Embodiments of the present invention provide a semiconductor device capable of improving current leakage property and a method for fabricating the same. According to an embodiment of the present invention, a capacitor comprises: a lower electrode; a dielectric layer over the lower electrode; and an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer, wherein a carbon content in the conductive carbon-containing layer is more than 5 at % and equal to or less than 10 at %.
Claims16
A capacitor, comprising:
- a lower electrode;
- a dielectric layer over the lower electrode;
- and
- an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer,
- wherein a carbon content in the conductive carbon-containing layer is more than 5% and equal to or less than 10%,
- wherein the conductive carbon-containing layer includes a carbon and oxygen.
3 more elements
A semiconductor device, comprising:
- a dielectric layer over a substrate;
- and
- a metal electrode over the dielectric layer, the metal electrode including a conductive carbon-containing layer,
- wherein a carbon content in the conductive carbon-containing layer is more than 5% and equal to or less than 10%,
- wherein the conductive carbon-containing layer includes a carbon and oxygen.
2 more elements
Dependencies are inferred from the claim text.