Multi-layered resistor with a tight temperature coefficient of resistance tolerance
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSzu-Hsien Lo, Che-Hung Liu, Tzu-Chung Tsai
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Abstract
Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a substrate. A resistor overlies the substrate. The resistor comprises a first metal nitride structure, a second metal nitride structure spaced from the first metal nitride structure, and a metal structure disposed between the first metal nitride structure and the second metal nitride structure. A first dielectric structure is disposed over the substrate and the resistor.
Claims20
An integrated chip (IC), comprising:
- a semiconductor substrate;
- a first dielectric structure disposed over the semiconductor substrate;
- a resistor disposed between the semiconductor substrate and first dielectric structure, the resistor comprising a continuous body of conductive material extending laterally over the semiconductor substrate, wherein continuous body comprises:
- a first metal nitride structure;
- a second metal nitride structure spaced apart vertically from the first metal nitride structure;
- and
- a metal structure disposed between the first metal nitride structure and the second metal nitride structure;
- a second dielectric structure disposed over the semiconductor substrate and the resistor;
- and
- a pair of conductive structures extending through the second dielectric structure and electrically coupled to the second metal nitride structure.
An integrated chip (IC), comprising:
- a semiconductor substrate;
- a first dielectric structure disposed over the semiconductor substrate;
- a resistor disposed between the semiconductor substrate and first dielectric structure, the resistor comprising a continuous body of conductive material extending laterally over the semiconductor substrate, wherein continuous body comprises:
- a first metal nitride structure;
- a second metal nitride structure spaced apart vertically from the first metal nitride structure;
- and
- a metal structure disposed between the first metal nitride structure and the second metal nitride structure;
- a second dielectric structure disposed over the semiconductor substrate and the resistor;
- and
- a pair of conductive structures extending through the second dielectric structure and electrically coupled to the second metal nitride structure, wherein:
- the first metal nitride structure comprises a metal;
- the metal structure comprises the metal;
- and
- the second metal nitride structure comprises the metal.
An integrated chip (IC), comprising:
- a semiconductor substrate;
- a first dielectric structure disposed over the semiconductor substrate;
- a resistor disposed between the semiconductor substrate and first dielectric structure, the resistor comprising a continuous body of conductive material extending laterally over the semiconductor substrate, wherein continuous body comprises:
- a first metal nitride structure;
- a second metal nitride structure spaced apart vertically from the first metal nitride structure;
- and
- a metal structure disposed between the first metal nitride structure and the second metal nitride structure;
- a second dielectric structure disposed over the semiconductor substrate and the resistor;
- and
- a pair of conductive structures extending through the second dielectric structure and electrically coupled to the second metal nitride structure,
- the first metal nitride structure has a first thickness;
- and
- the second metal nitride structure has a second thickness that is greater than the first thickness.
Dependencies are inferred from the claim text.