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US 12,215,439 B2Granted
SiC epitaxial wafer
AssigneeResonac Corporation
InventorsHiromasa Suo, Rimpei Kindaichi, Tamotsu Yamashita
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Abstract
A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.
Claims5
A SiC epitaxial wafer comprising:
- a SiC substrate;
- and
- a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein,
- a diameter of the SiC substrate is 195 mm or more, and
- a warp is 50 μm or less.
2 more elements
Dependencies are inferred from the claim text.