Memory device and method for manufacturing the same

Abstract

A memory device includes a substrate and an eFuse structure. The substrate includes an array region and an eFuse region and the eFuse region of the substrate has an eFuse trench. The eFuse structure includes a first gate oxide layer, a plurality of doped regions, a dummy buried word line, and an eFuse gate electrode. The first gate oxide layer is conformally formed on a surface of the eFuse trench. The doped regions are respectively formed in the substrate on opposite sides outside the eFuse trench, and in contact with the first gate oxide layer. The dummy buried word line is formed on the first gate oxide layer. The eFuse gate electrode is formed on the dummy buried word line and in contact with the first gate oxide layer. The dummy buried word line is electrically isolated from the eFuse gate electrode.

Dependencies are inferred from the claim text.