Manufacturing method for memory structure

A manufacturing method for memory structure, comprising:

• forming a bit line structure on a substrate;
• forming a contact structure on the substrate on one side of the bit line structure;
• and
• forming a capacitor structure on the contact structure, wherein the capacitor structure comprises:
• a first electrode disposed on the contact structure in a misaligned manner relative to the contact structure, and comprising a first bottom surface and a second bottom surface, wherein the first bottom surface is lower than the second bottom surface, and the first bottom surface is disposed on the contact structure;
• a second electrode disposed on the first electrode;
• and
• an insulating layer disposed between the first electrode and the second electrode, wherein
• the contact structure comprises:
• a first contact disposed on the substrate, wherein a top surface of the first contact is higher than a bottom surface of the bit line structure;
• and
• a second contact disposed on the first contact, wherein the first contact is located between the second contact and the substrate in a direction perpendicular to the substrate.