Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methods

A semiconductor device comprising:

• DRAM capacitors, at least one DRAM capacitor of the DRAM capacitors comprising:
• a first capacitor electrode and a laterally adjacent first capacitor electrode, the first capacitor electrode and the laterally adjacent first capacitor electrode each comprising a lower portion and an upper portion, the lower portion having a different width than the upper portion at a step transition, a difference in width between the lower portion and the upper portion at the step transition being between about 1 Å and about 50 Å, and a distance between an outer surface of the first capacitor electrode and an outer surface of the laterally adjacent first capacitor electrode being greater between respective upper portions of the first capacitor electrode and the laterally adjacent first capacitor electrode than between respective lower portions of the first capacitor electrode and the laterally adjacent first capacitor electrode;
• a capacitor dielectric on the first capacitor electrode and the laterally adjacent first capacitor electrode;
• and
• a second capacitor electrode and a laterally adjacent second capacitor electrode on the capacitor dielectric;
• and
• access devices operably coupled to the DRAM capacitors.

A system comprising:

• a memory array comprising:
• memory cells comprising DRAM capacitors and access devices operably coupled to the DRAM capacitors, at least one of the DRAM capacitors comprising:
• a first capacitor electrode formed on a substrate, the first capacitor electrode comprising a lower portion neighboring the substrate and an upper portion disposed away from the substrate, the lower portion having a greater thickness than the upper portion along an entire length of the first capacitor electrode;
• a capacitor dielectric adjacent to the first capacitor electrode;
• and
• a second capacitor electrode adjacent to the capacitor dielectric.