Semiconductor device
AssigneeJapan Display Inc.
InventorsAkihiro Hanada, Hajime Watakabe, Takuo Kaitoh, Ryo Onodera
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Abstract
A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and a first metal layer in contact with the oxide semiconductor layer and disposed between the source electrode and the drain electrode at a distance from the source electrode and the drain electrode.
Claims12
A semiconductor device including a thin-film transistor, the thin-film transistor comprising:
- an oxide semiconductor layer;
- a gate insulating layer;
- a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer;
- a source electrode in contact with the oxide semiconductor layer;
- a drain electrode in contact with the oxide semiconductor layer;
- and
- a first metal layer in contact with the oxide semiconductor layer and disposed between the source electrode and the drain electrode at a distance from the source electrode and the drain electrode, wherein
- the oxide semiconductor layer includes a channel region and a low resistance region, the low resistance region overlaps the first metal layer, and
- an oxygen concentration of the low resistance region is lower than the oxygen concentration of the channel region.
Dependencies are inferred from the claim text.