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US 12,191,344 B2Granted
Electrostatic Discharge protection semiconductor structure and a method of manufacture
AssigneeNexperia B.V.
InventorHans-Martin Ritter
Life of this patent
Estimating the term…
Abstract
A discharge protection semiconductor structure is provided that includes a substrate, a well positioned on the substrate, a first contact diffusion and a second contact diffusion, the first contact diffusion and the second contact diffusion positioned on the top side of the well, and a resistor positioned between the first contact diffusion and a second contact diffusion.
Claims19
A discharge protection semiconductor structure comprising:
- a substrate;
- a well of a first polarity positioned on the substrate;
- a resistor of a second polarity embedded in the well, the second polarity being inversed in respect to the first polarity, the resistor having a top surface and a bottom surface;
- and a first contact diffusion of the second polarity and a second contact diffusion of the second polarity, the resistor being positioned between the first contact diffusion and the second contact diffusion, a top surface of the first contact diffusion and a top surface of the second contact diffusion being coplanar with the top surface of the resistor, and a bottom surface of the first contact diffusion and a bottom surface of the second contact diffusion being below the bottom surface of the resistor;
- wherein doping of the well, doping of the resistor, and doping of the first contact diffusion and second contact diffusion are of a similar level.
2 more elements
A two-stage protection system comprising:
- a first protection stage;
- a second protection stage connected between a signal line and a supply line;
- and a resistor positioned in the signal line between the first protection stage and the second protection stage, the resistor being positioned between a first contact diffusion and a second contact diffusion, the resistor being embedded in a well positioned on a substrate, the resistor having a top surface and a bottom surface, a top surface of the first contact diffusion and a top surface of the second contact diffusion being coplanar with the top surface of the resistor, and a bottom surface of the first contact diffusion and a bottom surface of the second contact diffusion being below the bottom surface of the resistor, wherein the well is of a first polarity, the resistor is of a second polarity, the second polarity being inversed in respect to the first polarity, and wherein doping of the well, doping of the first contact diffusion and the second contact diffusion, and doping of the resistor are of a similar level.
Dependencies are inferred from the claim text.