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US 12,191,343 B2Granted
Semiconductor device and method of manufacturing semiconductor device
AssigneeLapis Semiconductor Co., Ltd.
InventorTakamitsu Furukawa
Life of this patent
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Abstract
A semiconductor device including: a semiconductor substrate; a seed layer that is formed on the semiconductor substrate; and wiring that is formed on the seed layer and includes parallel row portions that are arranged at intervals from each other, and in which penetration passages that penetrate the parallel row portions in a direction in which the parallel rows lined up are formed in the parallel row portions.
Claims3
A method of manufacturing a semiconductor device comprising:
- forming a seed layer on a semiconductor substrate;
- coating resist on the seed layer;
- placing on the resist a mask component having a light shading portion that exposes the resist using a wiring pattern that represents a configuration of wiring while covering other portions of the resist, and linear portions that, when the configuration of the wiring is looked at in plan view, cover the resist over parallel row portions that are lined up at intervals from each other;
- forming a resist pattern in which, while leaving the wiring pattern open by exposing the resist using the mask component, the resists that are lined up at intervals from each other so as to correspond to the parallel row portions are connected together linearly in a bottom portion of the openings by the linear portions;
- forming wiring in the locations that have been opened by removing the resist from the seed layer in the resist pattern;
- and
- removing the seed layer by etching.
4 more elements
Dependencies are inferred from the claim text.