Integrated circuit structure with resistive semiconductor material for back well

An integrated circuit (IC) structure comprising:

• a semiconductor substrate having a deep well of a first doping type;
• a device within a first portion of the deep well, the device including:
• a first doped semiconductor material coupled to a first contact, and having a second doping type opposite the first doping type;
• a second doped semiconductor material coupled to a second contact, having the second doping type, wherein the deep well couples the first doped semiconductor material to the second doped semiconductor material;
• a first back well within a second portion of the deep well, and having the first doping type;
• and
• a first resistive semiconductor material within the deep well and interposed between the first portion of the deep well and the second portion of the deep well.

An integrated circuit (IC) structure comprising:

• a semiconductor substrate having a deep well of a first doping type;
• a shallow well within the deep well, the shallow well having a second doping type opposite the first doping type;
• a device within a first portion of the deep well and within the shallow well, the device including:
• a first doped semiconductor material within the first portion of the deep well, coupled to a first contact, and having the second doping type, and
• a second doped semiconductor material within the shallow well, coupled to a second contact, having the first doping type, wherein the deep well couples the first doped semiconductor material to the second doped semiconductor material,
• a back well within a second portion of the deep well, and having the first doping type;
• and
• a resistive semiconductor material within the deep well and interposed between the first portion of the deep well and the second portion of the deep well.