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US 12,191,253 B2Granted
Semiconductor device with fuse structure
AssigneeNanya Technology Corporation
InventorHsih-Yang Chiu
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a fuse element, and a fuse medium. The fuse element is disposed within the substrate. The fuse medium surrounds a lateral surface of the fuse element.
Claims15
A semiconductor device, comprising:
- a substrate;
- a fuse element disposed within the substrate;
- and
- a fuse medium surrounding a lateral surface of the fuse element;
- wherein the fuse element comprises polysilicon, and the substrate comprises a first doped region serving as the fuse medium;
- wherein the first doped region is spaced apart from an upper surface of the substrate;
- wherein the substrate comprises a second doped region between the upper surface of the substrate and the first doped region, and a first dopant concentration of the first doped region is different from a second dopant concentration of the second doped region.
4 more elements
A semiconductor device, comprising:
- a substrate;
- a fuse element disposed within the substrate and extending from an upper surface of the substrate;
- and
- a fuse medium in contact with the fuse element, wherein the fuse medium is spaced apart from the upper surface of the substrate;
- wherein the fuse element comprises polysilicon, and the substrate comprises a first doped region serving as the fuse medium;
- wherein the substrate comprises a second doped region between the upper surface of the substrate and the first doped region, and a first dopant concentration of the first doped region is different from a second dopant concentration of the second doped region.
3 more elements
Dependencies are inferred from the claim text.