Method for evaluating semiconductor substrate

A method for evaluating electrical characteristics of a semiconductor substrate, the method comprising the steps of:

• forming a p-n junction on a surface of the semiconductor substrate;
• mounting the semiconductor substrate on a wafer chuck provided with an equipment for performing light irradiation on the surface of the semiconductor substrate and an equipment for measuring the quantity of the light for the irradiation;
• performing light irradiation on the surface of the semiconductor substrate for a predetermined time;
• and
• measuring an amount of carriers generated after the light irradiation of the p-n junction at least after turning off the light irradiation, wherein
• an amount of carriers generated during the light irradiation of the p-n junction is measured in the step of performing light irradiation, and
• the amount of carriers generated during the light irradiation and the amount of carriers generated after the light irradiation are measured with a carrier measuring probe that is provided separately from the equipment for performing light irradiation and the equipment for measuring the quantity of the light for the irradiation.